Invention Grant
- Patent Title: Wafer level test probe card
- Patent Title (中): 晶圆级测试探针卡
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Application No.: US12132280Application Date: 2008-06-03
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Publication No.: US07750651B2Publication Date: 2010-07-06
- Inventor: Clinton Chih-Chieh Chao , Fei-Chieh Yang , Chun-Hsing Chen , Mill-Jer Wang , Sheng-Hsi Huang , Ming-Cheng Hsu
- Applicant: Clinton Chih-Chieh Chao , Fei-Chieh Yang , Chun-Hsing Chen , Mill-Jer Wang , Sheng-Hsi Huang , Ming-Cheng Hsu
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Duane Morris LLP
- Agent Frank J. Spanitz
- Main IPC: G01R31/02
- IPC: G01R31/02

Abstract:
A probe card for wafer level testing of a plurality of semiconductor devices simultaneously. The probe card may include a circuit board including wafer level testing circuitry, a partially flexible silicon substrate, a plurality of test probes disposed at least partially in the substrate for engaging a plurality of corresponding electrical contacts in a wafer under test, and a compressible underfill coupling the substrate to the circuit board. The probe card may be used for wafer level burn-in testing. In some embodiments, the probe card may include active test control circuitry embedded in the silicon substrate for conducting wafer level high frequency testing.
Public/Granted literature
- US20090224780A1 WAFER LEVEL TEST PROBE CARD Public/Granted day:2009-09-10
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