Invention Grant
US07750654B2 Probe method, prober, and electrode reducing/plasma-etching processing mechanism
有权
探头方法，探针和电极还原/等离子体蚀刻处理机制
- Patent Title: Probe method, prober, and electrode reducing/plasma-etching processing mechanism
- Patent Title (中): 探头方法，探针和电极还原/等离子体蚀刻处理机制
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Application No.: US11068973Application Date: 2005-03-02
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Publication No.: US07750654B2Publication Date: 2010-07-06
- Inventor: Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
- Applicant: Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Octec Inc.,Tokyo Electron Limited
- Current Assignee: Octec Inc.,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-256744 20020902; JP2002-336952 20021120
- Main IPC: G01R31/02
- IPC: G01R31/02
Abstract:
A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.
Public/Granted literature
- US20050151549A1 Probe method, prober, and electrode reducing/plasma-etching processing mechanism Public/Granted day:2005-07-14
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