Invention Grant
- Patent Title: Voltage detecting circuit and semiconductor device including the same
- Patent Title (中): 电压检测电路和包括其的半导体器件
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Application No.: US12259923Application Date: 2008-10-28
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Publication No.: US07750659B2Publication Date: 2010-07-06
- Inventor: Koichiro Hayashi , Hitoshi Tanaka
- Applicant: Koichiro Hayashi , Hitoshi Tanaka
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-280506 20071029
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26

Abstract:
A voltage detecting circuit detects a voltage between first and second wirings, and comprises at least first and second transistors connected in series between the first and second wirings, wherein a first reference voltage is supplied to a gate of the first transistor, a gate and a drain of the second transistor are short-circuited, and a detection signal is output from a connection point between a drain of the first transistor and a source of the second transistor.
Public/Granted literature
- US20090115402A1 VOLTAGE DETECTING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2009-05-07
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