A semiconductor integrated circuit includes a MOS logic operating by first and second voltages; a switching transistor unit disposed between a supply terminal of the first voltage or the second voltage and the MOS logic, and turned on or off in response to a control signal so as to control a supply of the first or second voltage to the MOS logic; and a fuse unit disposed between the supply terminal of the first voltage or the second voltage and the switching transistor unit, for cutting off a supply of the first or second voltage to the switching transistor unit by a selective cut based on a test result. Whereby, a product development or production difficulty or a yield decrease based on a performance drop or leakage current increase in a circuit having a power gate or MTCMOS may be improved. In addition, a product development delay caused by a mask revision required at a transistor level may be improved in a revision of an NMOS or PMOS transistor.