Invention Grant
- Patent Title: Level shifter using coupling phenomenon
- Patent Title (中): 电平移位器使用耦合现象
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Application No.: US12291259Application Date: 2008-11-07
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Publication No.: US07750718B2Publication Date: 2010-07-06
- Inventor: Saeng Hwan Kim
- Applicant: Saeng Hwan Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2008-0037410 20080422
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level shifter removes delay, which is generated at the time of transition of an input signal level, by adjusting a size of NMOS transistors to perform pull-down and pull-up operations. The level shifter includes a coupling unit for setting up a voltage level of a first node according to a voltage level of an input signal, a first buffer for transferring an output signal by buffering a signal from the first node, and a driving unit configured to receive the input signal and the output signal and drive the first node.
Public/Granted literature
- US20090261884A1 Level shifter using coupling phenomenon Public/Granted day:2009-10-22
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