Invention Grant
US07750738B2 Process, voltage and temperature control for high-speed, low-power fixed and variable gain amplifiers based on MOSFET resistors
有权
基于MOSFET电阻的高速，低功耗固定和可变增益放大器的工艺，电压和温度控制
- Patent Title: Process, voltage and temperature control for high-speed, low-power fixed and variable gain amplifiers based on MOSFET resistors
- Patent Title (中): 基于MOSFET电阻的高速，低功耗固定和可变增益放大器的工艺，电压和温度控制
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Application No.: US12274649Application Date: 2008-11-20
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Publication No.: US07750738B2Publication Date: 2010-07-06
- Inventor: Elmar Bach
- Applicant: Elmar Bach
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H03G3/00
- IPC: H03G3/00
Abstract:
An integrated circuit includes a first, diode-connected MOSFET and a second, linearly operated MOSFET serving as resistor. A current source may provide a current such that the second MOSFET shows a transconductance constant over temperature and process variations. In one embodiment the MOSFET devices are included in a variable gain amplifier for adjusting the gain.
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