Invention Grant
- Patent Title: Coaxial-to-microstrip transitions and manufacturing methods
- Patent Title (中): 同轴到微带过渡和制造方法
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Application No.: US12038546Application Date: 2008-02-27
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Publication No.: US07750764B2Publication Date: 2010-07-06
- Inventor: David K. Snodgrass , Thomas M. Gaudette , Mark V. Faulkner , Thomas G. Flack , Thomas E. Halterman , Mario Pinimonti La Marche , Edward B. Anderson
- Applicant: David K. Snodgrass , Thomas M. Gaudette , Mark V. Faulkner , Thomas G. Flack , Thomas E. Halterman , Mario Pinimonti La Marche , Edward B. Anderson
- Applicant Address: US CA Irvine
- Assignee: Microsemi Corporation
- Current Assignee: Microsemi Corporation
- Current Assignee Address: US CA Irvine
- Agent Simon Kahn
- Main IPC: H01P5/08
- IPC: H01P5/08

Abstract:
Coaxial-to-microstrip transitions may include a microstrip line and coaxial-line assembly. The microstrip line includes a first dielectric having an aperture, a conductive strip disposed on one primary face of the first dielectric, and a ground plane disposed on the opposite primary face of the first dielectric. The coaxial-line assembly includes an outer conductor and an inner conductor. In some examples, the ground plane extends between the outer conductor and the inner conductor on a first side of the coaxial-line assembly proximate the conductive strip and an aperture cross section extends beyond the outer conductor on a second side of the coaxial-line assembly distal the conductive strip. In some examples, the ground plane has a non-circular aperture. In some examples, the outer conductor encloses an area that is less than an area of the aperture. In some examples, the enclosed area has a width that is less than a corresponding width of the first aperture.
Public/Granted literature
- US20090212881A1 COAXIAL-TO-MICROSTRIP TRANSITIONS AND MANUFACTURING METHODS Public/Granted day:2009-08-27
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