Invention Grant
- Patent Title: Inductor structure
- Patent Title (中): 电感结构
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Application No.: US12339629Application Date: 2008-12-19
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Publication No.: US07750784B2Publication Date: 2010-07-06
- Inventor: Sheng-Yuan Lee
- Applicant: Sheng-Yuan Lee
- Applicant Address: TW Taipei Hsien
- Assignee: VIA Technologies, Inc.
- Current Assignee: VIA Technologies, Inc.
- Current Assignee Address: TW Taipei Hsien
- Agency: J.C. Patents
- Priority: TW96102655A 20070124; TW96115699A 20070503
- Main IPC: H01F27/32
- IPC: H01F27/32

Abstract:
An inductor structure includes a winding turn layer, a shielding layer, and a number of vias. The winding turn layer disposed above a substrate is formed by a number of turns connected in series and t has a first end and a second end. The first end is grounded. The shielding layer disposed between the winding turn layer and the substrate has a third end and a fourth end. At least two turns starting from the first end of the winding turn layer are projected onto the shielding layer. The vias are disposed between the winding turn layer and the shielding layer to at least electrically connect the third end and the fourth end of the shielding layer to a first turn of the winding turn layer. The first turn starts from the first end, and the winding turn layer and the shielding layer are electrically coupled in parallel.
Public/Granted literature
- US20090096567A1 INDUCTOR STRUCTURE Public/Granted day:2009-04-16
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