Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12267878Application Date: 2008-11-10
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Publication No.: US07751222B2Publication Date: 2010-07-06
- Inventor: Tadashi Nitta
- Applicant: Tadashi Nitta
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-363052 20051216
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/02 ; G11C11/34

Abstract:
A basic cell comprises a memory cell capable of retaining data having at least a binary value, a first selecting transistor connected between a first terminal of the memory cell and the Mth bit line, and a second selecting transistor connected between the first terminal of the memory cell and the M+1th bit line. A gate of the first selecting transistor is connected to the 2·N−1th selecting line, and a gate of the second selecting transistor is connected to the 2·Nth selecting line.
Public/Granted literature
- US20090080231A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-03-26
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