Invention Grant
US07751222B2 Semiconductor memory device 有权
半导体存储器件

Semiconductor memory device
Abstract:
A basic cell comprises a memory cell capable of retaining data having at least a binary value, a first selecting transistor connected between a first terminal of the memory cell and the Mth bit line, and a second selecting transistor connected between the first terminal of the memory cell and the M+1th bit line. A gate of the first selecting transistor is connected to the 2·N−1th selecting line, and a gate of the second selecting transistor is connected to the 2·Nth selecting line.
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