Invention Grant
US07751224B2 Data writing and reading method for memory device employing magnetic domain wall movement
失效
采用磁畴壁运动的存储器件的数据写入和读取方法
- Patent Title: Data writing and reading method for memory device employing magnetic domain wall movement
- Patent Title (中): 采用磁畴壁运动的存储器件的数据写入和读取方法
-
Application No.: US11750376Application Date: 2007-05-18
-
Publication No.: US07751224B2Publication Date: 2010-07-06
- Inventor: Chee-kheng Lim , Eun-sik Kim
- Applicant: Chee-kheng Lim , Eun-sik Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0089649 20060915
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.
Public/Granted literature
- US20080068936A1 DATA WRITING AND READING METHOD FOR MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT Public/Granted day:2008-03-20
Information query
