Invention Grant
- Patent Title: Reading phase change memories with select devices
- Patent Title (中): 使用选择设备读取相变记忆
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Application No.: US11880934Application Date: 2007-07-25
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Publication No.: US07751226B2Publication Date: 2010-07-06
- Inventor: Derchang Kau
- Applicant: Derchang Kau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory including a threshold device, such as an ovonic threshold switch, and a storage device may be read. Reading the cell may involve applying a first voltage to a selected cell and then a second voltage, lower than the first voltage. The first voltage may be sufficient to threshold the ovonic threshold switch if the storage device is in the set state.
Public/Granted literature
- US20090027951A1 Reading phase change memories with select devices Public/Granted day:2009-01-29
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