Invention Grant
- Patent Title: Phase change memory device and program method thereof
- Patent Title (中): 相变存储器件及其编程方法
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Application No.: US12168742Application Date: 2008-07-07
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Publication No.: US07751234B2Publication Date: 2010-07-06
- Inventor: Kwang-Jin Lee , Du-Eung Kim , Sang-Beom Kang , Woo-Yeong Cho
- Applicant: Kwang-Jin Lee , Du-Eung Kim , Sang-Beom Kang , Woo-Yeong Cho
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2005-86619 20050916
- Main IPC: G11C11/56
- IPC: G11C11/56
Abstract:
A phase change memory device includes a memory cell having a phase change material, a write driver adapted to supply a program current to the memory cell during a programming interval, and a pump circuit adapted to enhance a current supply capacity of the write driver during the programming interval. The pump circuit is activated prior to the programming interval in response to an external control signal.
Public/Granted literature
- US20090003049A1 PHASE CHANGE MEMORY DEVICE AND PROGRAM METHOD THEREOF Public/Granted day:2009-01-01
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