Invention Grant
- Patent Title: MEM suspended gate non-volatile memory
- Patent Title (中): MEM暂停门非易失性存储器
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Application No.: US12398789Application Date: 2009-03-05
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Publication No.: US07751236B2Publication Date: 2010-07-06
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04
Abstract:
A carrier storage node such as a floating gate is formed on a moving electrode with a control gate to form a suspended gate non-volatile memory, reducing floating gate to floating gate coupling and leakage current, and increasing data retention.
Public/Granted literature
- US20090196106A1 MEM SUSPENDED GATE NON-VOLATILE MEMORY Public/Granted day:2009-08-06
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