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US07751242B2 NAND memory device and programming methods 有权
NAND存储器件和编程方法

NAND memory device and programming methods
Abstract:
A NAND Flash memory device is described that can reduce bit line coupling and floating gate coupling during program and verify operations. Consecutive bit lines of an array row are concurrently programmed as a common page. Floating gate coupling during programming can therefore be reduced. Multiple verify operations are performed on separate bit lines of the page. Bit line coupling can therefore be reduced.
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