Invention Grant
- Patent Title: NAND memory device and programming methods
- Patent Title (中): NAND存储器件和编程方法
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Application No.: US11215990Application Date: 2005-08-30
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Publication No.: US07751242B2Publication Date: 2010-07-06
- Inventor: Frankie F. Roohparvar , Ebrahim Abedifard
- Applicant: Frankie F. Roohparvar , Ebrahim Abedifard
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A NAND Flash memory device is described that can reduce bit line coupling and floating gate coupling during program and verify operations. Consecutive bit lines of an array row are concurrently programmed as a common page. Floating gate coupling during programming can therefore be reduced. Multiple verify operations are performed on separate bit lines of the page. Bit line coupling can therefore be reduced.
Public/Granted literature
- US20070047310A1 NAND memory device and programming methods Public/Granted day:2007-03-01
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