Invention Grant
US07751252B2 Semiconductor memory with a reference current generating circuit having a reference current generating section and an amplifier section
有权
具有参考电流产生电路的半导体存储器，具有参考电流产生部分和放大器部分
- Patent Title: Semiconductor memory with a reference current generating circuit having a reference current generating section and an amplifier section
- Patent Title (中): 具有参考电流产生电路的半导体存储器，具有参考电流产生部分和放大器部分
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Application No.: US12273979Application Date: 2008-11-19
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Publication No.: US07751252B2Publication Date: 2010-07-06
- Inventor: Jin Kashiwagi , Yasuhiko Honda , Yoshihiko Kamata
- Applicant: Jin Kashiwagi , Yasuhiko Honda , Yoshihiko Kamata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-300268 20071120
- Main IPC: G11C16/28
- IPC: G11C16/28
Abstract:
A semiconductor memory capable of storing and reading data in a memory cell for holding the data corresponding to a threshold voltage has a reference current generating circuit having a reference current generating section and an amplifier section.
Public/Granted literature
- US20090129148A1 SEMICONDUCTOR MEMORY Public/Granted day:2009-05-21
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