Invention Grant
- Patent Title: Semiconductor nonvolatile memory device
- Patent Title (中): 半导体非易失性存储器件
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Application No.: US12233670Application Date: 2008-09-19
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Publication No.: US07751255B2Publication Date: 2010-07-06
- Inventor: Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
- Applicant: Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-157209 20040527; JP2005-062063 20050307
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/06
Abstract:
An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
Public/Granted literature
- US20090014775A1 SEMICONDUCTOR NONVOLATILE MEMORY DEVICE Public/Granted day:2009-01-15
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