Invention Grant
- Patent Title: High performance read bypass test for SRAM circuits
- Patent Title (中): SRAM电路的高性能读取旁路测试
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Application No.: US12146777Application Date: 2008-06-26
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Publication No.: US07751266B2Publication Date: 2010-07-06
- Inventor: Chad Allen Adams , Derick Gardner Behrends , Daniel Mark Nelson , Jeffrey Milton Scherer
- Applicant: Chad Allen Adams , Derick Gardner Behrends , Daniel Mark Nelson , Jeffrey Milton Scherer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Rabin & Berdo, PC
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A design structure embodied in a machine readable medium used in a design process and an integrated circuit for high performance SRAM (Static Random Access Memory) read bypass for BIST (built-in self-test). The design structure and integrated structure includes a dynamic to static conversion unit for a read output of an SRAM array, and a test bypass unit integrated into the dynamic to static conversion unit, so as to allow the read output of the SRAM array to pass through in a non-test mode without impacting performance, and bypass the read output of the SRAM array and allow a test signal to pass though in a test mode.
Public/Granted literature
- US20090323445A1 High Performance Read Bypass Test for SRAM Circuits Public/Granted day:2009-12-31
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