Invention Grant
- Patent Title: Half-select compliant memory cell precharge circuit
- Patent Title (中): 半选择兼容的存储单元预充电电路
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Application No.: US11782071Application Date: 2007-07-24
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Publication No.: US07751267B2Publication Date: 2010-07-06
- Inventor: Rajiv V. Joshi , Rouwaida Kanj , Jayakumaran Sivagnaname
- Applicant: Rajiv V. Joshi , Rouwaida Kanj , Jayakumaran Sivagnaname
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Brian Verminski, Esq.
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C11/41 ; G11C11/413

Abstract:
A programmable precharge circuit includes a plurality of transistors. Each transistor has a different threshold voltage from other transistors of the plurality of transistors. Each transistor is configured to connect a supply voltage to a node, and the node is selectively coupled to bitlines in accordance with a memory operation. Control logic is configured to enable at least one of the plurality of transistors to provide a programmable precharge voltage to the node in accordance with a respective threshold voltage drop from the supply voltage of one of the plurality of transistors.
Public/Granted literature
- US20090027983A1 HALF-SELECT COMPLIANT MEMORY CELL PRECHARGE CIRCUIT Public/Granted day:2009-01-29
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