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US07751267B2 Half-select compliant memory cell precharge circuit 有权
半选择兼容的存储单元预充电电路

Half-select compliant memory cell precharge circuit
Abstract:
A programmable precharge circuit includes a plurality of transistors. Each transistor has a different threshold voltage from other transistors of the plurality of transistors. Each transistor is configured to connect a supply voltage to a node, and the node is selectively coupled to bitlines in accordance with a memory operation. Control logic is configured to enable at least one of the plurality of transistors to provide a programmable precharge voltage to the node in accordance with a respective threshold voltage drop from the supply voltage of one of the plurality of transistors.
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