Invention Grant
US07751455B2 Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
有权
蓝绿色激光二极管采用氮化镓或氮化铟镓包层激光器结构
- Patent Title: Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
- Patent Title (中): 蓝绿色激光二极管采用氮化镓或氮化铟镓包层激光器结构
-
Application No.: US11262272Application Date: 2005-10-28
-
Publication No.: US07751455B2Publication Date: 2010-07-06
- Inventor: Michael A. Kneissl
- Applicant: Michael A. Kneissl
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agent Jonathan A. Small
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region.
Public/Granted literature
- US20060126688A1 Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure Public/Granted day:2006-06-15
Information query
