Invention Grant
- Patent Title: Method for manufacturing a sputtering target
- Patent Title (中): 溅射靶的制造方法
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Application No.: US11892755Application Date: 2007-08-27
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Publication No.: US07754027B2Publication Date: 2010-07-13
- Inventor: Rong-Zhi Chen , Jye-Long Lee , In-Ting Hong , Jui-Tung Chang , Pa-Tsui Sze
- Applicant: Rong-Zhi Chen , Jye-Long Lee , In-Ting Hong , Jui-Tung Chang , Pa-Tsui Sze
- Applicant Address: TW Kaohsiung
- Assignee: China Steel Corporation
- Current Assignee: China Steel Corporation
- Current Assignee Address: TW Kaohsiung
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: H01F1/01
- IPC: H01F1/01

Abstract:
A method for manufacturing a sputtering target includes the steps of: providing a highly pure matrix material containing a magnetic metal, and a highly pure precious metal ingot material; cleaning the surfaces of the matrix material and the precious metal ingot; vacuum melting the matrix material and the precious metal ingot to obtain a molten alloy; pouring the molten alloy in a mold having a cooling system while maintaining a surface of the molten alloy at a molten state by arc heating until the pouring is finished, thereby forming the molten alloy into a cast blank; hot working the cast blank; and annealing the cast blank after the hot working.
Public/Granted literature
- US20090056840A1 Method for manufacturing a sputtering target Public/Granted day:2009-03-05
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