Invention Grant
- Patent Title: Varistor element
- Patent Title (中): 压敏电阻元件
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Application No.: US12036435Application Date: 2008-02-25
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Publication No.: US07754109B2Publication Date: 2010-07-13
- Inventor: Naoyoshi Yoshida , Hitoshi Tanaka , Dai Matsuoka
- Applicant: Naoyoshi Yoshida , Hitoshi Tanaka , Dai Matsuoka
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-053286 20070302
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01C7/112

Abstract:
In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan δ (thermal conversion factor of resistance) against change in temperature.
Public/Granted literature
- US20080210911A1 VARISTOR ELEMENT Public/Granted day:2008-09-04
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