Invention Grant
- Patent Title: Indium-oxide-based transparent conductive film and method for producing the film
- Patent Title (中): 氧化铟系透明导电膜及其制造方法
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Application No.: US11886071Application Date: 2007-04-02
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Publication No.: US07754110B2Publication Date: 2010-07-13
- Inventor: Seiichiro Takahashi , Norihiko Miyashita
- Applicant: Seiichiro Takahashi , Norihiko Miyashita
- Applicant Address: JP Tokyo
- Assignee: Mitsui Mining & Smelting Co., Ltd.
- Current Assignee: Mitsui Mining & Smelting Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-101203 20060331; JP2007-095783 20070330
- International Application: PCT/JP2007/057401 WO 20070402
- International Announcement: WO2007/114429 WO 20071011
- Main IPC: H01B1/08
- IPC: H01B1/08 ; C23C14/08 ; B05D5/12

Abstract:
The invention provides a transparent conductive film which exhibits low resistance and high transmittance, is an amorphous film, can be relatively readily patterned by etching with a weak acid, and can be relatively readily crystallized, and a method for producing the film.The transparent conductive film deposited from a sputtering target containing a sintered oxide including indium oxide, barium, and, in accordance with needs, tin, characterized in that the film contains indium oxide, barium, and, in accordance with needs, tin.
Public/Granted literature
- US20090267029A1 Indium-oxide-based transparent conductive film and method for producing the film Public/Granted day:2009-10-29
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