Invention Grant
- Patent Title: Carbon nanotube array and method for forming same
- Patent Title (中): 碳纳米管阵列及其形成方法
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Application No.: US10334547Application Date: 2002-12-31
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Publication No.: US07754182B2Publication Date: 2010-07-13
- Inventor: KaiLi Jiang , ShouShan Fan , QunQing Li
- Applicant: KaiLi Jiang , ShouShan Fan , QunQing Li
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Beijing FUNATE Innovation Technology Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Beijing FUNATE Innovation Technology Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent Wei Te Chung
- Priority: CN02134776 20020917
- Main IPC: D01F9/12
- IPC: D01F9/12

Abstract:
A method for forming a carbon nanotube array includes the following steps: providing a smooth substrate (11); depositing a metal catalyst layer (21) on a surface of the substrate; heating the treated substrate to a predetermined temperature in flowing protective gas; and introducing a mixture of carbon source gas and protective gas for 5-30 minutes, thus forming a carbon nanotube array (61) extending from the substrate. When the mixture of carbon source gas and protective gas is introduced, a temperature differential greater than 50° C. between the catalyst and its surrounding environment is created by adjusting a flow rate of the carbon source gas. Further, a partial pressure of the carbon source gas is maintained lower than 20%, by adjusting a ratio of the flow rates of the carbon source gas and the protective gas. The carbon nanotubes formed in the carbon nanotube array are well bundled.
Public/Granted literature
- US20040053053A1 Carbon nanotube array and method for forming same Public/Granted day:2004-03-18
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