Invention Grant
US07754352B2 Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof 有权
非晶半导体和导电透明金属氧化物薄膜及其制备

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof
Abstract:
Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.
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