Invention Grant
US07754396B2 Mask with focus measurement pattern and method for measuring focus value in exposure process using the same
有权
具有聚焦测量图案的掩模和用于在曝光过程中测量聚焦值的方法
- Patent Title: Mask with focus measurement pattern and method for measuring focus value in exposure process using the same
- Patent Title (中): 具有聚焦测量图案的掩模和用于在曝光过程中测量聚焦值的方法
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Application No.: US11758502Application Date: 2007-06-05
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Publication No.: US07754396B2Publication Date: 2010-07-13
- Inventor: Jong Kyun Hong
- Applicant: Jong Kyun Hong
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2006-0137140 20061228
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A mask with a focus measurement pattern and a method for measuring a focus value in an exposure process using the same that are capable of improving the measurement of a focus change, wherein the mask includes an outer reference pattern which provides a position reference for focus measurement, and focus measurement patterns which are provided apart from the outer reference pattern and formed in a line shape extending in two different directions. Accordingly, the focus change caused in the exposure process can be measured by measuring the line shortening of the focus measurement patterns.
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