Invention Grant
- Patent Title: Method of fabricating submicron suspended objects and application to the mechanical characterization of said objects
- Patent Title (中): 制造亚微米悬浮物体的方法和应用于所述物体的机械表征
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Application No.: US11454151Application Date: 2006-06-15
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Publication No.: US07754506B2Publication Date: 2010-07-13
- Inventor: Pierre Vekeman , Sodonie Lefebvre , Thierry Hoc , Pascal Deconinck
- Applicant: Pierre Vekeman , Sodonie Lefebvre , Thierry Hoc , Pascal Deconinck
- Applicant Address: FR
- Assignee: Altis Semiconductor
- Current Assignee: Altis Semiconductor
- Current Assignee Address: FR
- Agency: Sofer & Haroun, LLP
- Priority: FR0551622 20050615
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating submicron objects that includes the following steps: depositing a void layer on a support, depositing a transfer layer on the void layer, producing the objects in the transfer layer, producing a hard mask on a portion of the transfer layer to delimit a region comprising a portion of the objects, and etching the combination formed by the hard mask, the transfer layer and the void layer to eliminate the hard mask and the portion of the transfer layer in the region and to open up the portion of the void layer under the region so that the objects are suspended, the rate of etching the void layer being greater than the rate of etching the transfer layer and the hard mask.
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