Invention Grant
- Patent Title: Phase-separated dielectric structure fabrication process
- Patent Title (中): 相分离电介质结构制造工艺
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Application No.: US11695131Application Date: 2007-04-02
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Publication No.: US07754510B2Publication Date: 2010-07-13
- Inventor: Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
- Applicant: Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Agent Eugene O. Palazzo
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
Public/Granted literature
- US20080242112A1 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS Public/Granted day:2008-10-02
Information query
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