Invention Grant
- Patent Title: Method of fabricating semiconductor light-emitting devices with isolation trenches
- Patent Title (中): 制造具有隔离沟槽的半导体发光器件的方法
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Application No.: US11119805Application Date: 2005-05-03
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Publication No.: US07754512B2Publication Date: 2010-07-13
- Inventor: Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
- Applicant: Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
- Applicant Address: JP Tokyo
- Assignee: Oki Data Corporation
- Current Assignee: Oki Data Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2002-085530 20020326
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00 ; H01L33/08

Abstract:
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
Public/Granted literature
- US20050189547A1 Semiconductor light-emitting device with isolation trenches, and method of fabricating same Public/Granted day:2005-09-01
Information query
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