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US07754513B2 Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures 失效
混合基板上的防起堆电阻半导体结构和形成这种半导体结构的方法

Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
Abstract:
Latch-up resistant semiconductor structures formed on a hybrid substrate and methods of forming such latch-up resistant semiconductor structures. The hybrid substrate is characterized by first and second semiconductor regions that are formed on a bulk semiconductor region. The second semiconductor region is separated from the bulk semiconductor region by an insulating layer. The first semiconductor region is separated from the bulk semiconductor region by a conductive region of an opposite conductivity type from the bulk semiconductor region. The buried conductive region thereby the susceptibility of devices built using the first semiconductor region to latch-up.
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