Compound semiconductor and method for producing same

Invention Grant

US07754515B2 Compound semiconductor and method for producing same 有权

Title translation: 化合物半导体及其制造方法

Please log in to see more content

Patent Title: Compound semiconductor and method for producing same
Patent Title (中): 化合物半导体及其制造方法
Application No.: US10558427

Application Date: 2004-05-28
Publication No.: US07754515B2

Publication Date: 2010-07-13
Inventor: Masaya Shimizu , Makoto Sasaki , Yoshihiko Tsuchida
Applicant: Masaya Shimizu , Makoto Sasaki , Yoshihiko Tsuchida
Applicant Address: JP Tokyo
Assignee: Sumitomo Chemical Company, Limited
Current Assignee: Sumitomo Chemical Company, Limited
Current Assignee Address: JP Tokyo
Agency: Fitch, Even, Tabin & Flannery
Priority: JP2003-154745 20030530
International Application: PCT/JP2004/007792 WO 20040528
International Announcement: WO2004/107460 WO 20041209
Main IPC: H01L33/00
IPC: H01L33/00 ; H01L21/20

Compound semiconductor and method for producing same

Abstract:

A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0

Abstract(Chinese):

包括具有两个阻挡层的单量子阱结构的组III-V族化合物半导体和由下式表示的量子阱层：In x Ga y Al z N（其中x + y + z = 1,0

Public/Granted literature

US20060243960A1 Compound semiconductor and method for producing same Public/Granted day:2006-11-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L33/00	至少有一个电位跃变势垒或表面势垒的专门适用于光发射的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；这些半导体器件的零部件（H01L51/00优先；由在一个公共衬底中或其上形成有多个半导体组件并包括具有至少一个电位跃变势垒或表面势垒，专门适用于光发射的器件入H01L27/15；半导体激光器入H01S5/00）