Invention Grant
- Patent Title: Thermal enhanced low profile package structure and method for fabricating the same
- Patent Title (中): 热增强薄型封装结构及其制造方法
-
Application No.: US12388191Application Date: 2009-02-18
-
Publication No.: US07754530B2Publication Date: 2010-07-13
- Inventor: Enboa Wu , Shou-Lung Chen
- Applicant: Enboa Wu , Shou-Lung Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Volpe and Koenig PC
- Priority: TW94112784A 20050421
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A thermal enhanced low profile package structure and a method for fabricating the same are provided. The package structure typically includes a metallization layer with an electronic component thereon which is between two provided dielectric layers. The metallization layer as well as the electronic component is embedded and packaged while the substrates are laminated via a lamination process. The fabricated package structure performs not only a superior electric performance, but also an excellent enhancement in thermal dissipation.
Public/Granted literature
- US20090155954A1 THERMAL ENHANCED LOW PROFILE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-06-18
Information query
IPC分类: