Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12200183Application Date: 2008-08-28
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Publication No.: US07754533B2Publication Date: 2010-07-13
- Inventor: Ivan Nikitin
- Applicant: Ivan Nikitin
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor device. One embodiment provides a carrier. A semiconductor chip is provided with a first face and a second face opposite to the first face. The semiconductor chip is placed over the carrier with the first face facing the carrier. A voltage is applied between the second face of the semiconductor chip and the carrier for attaching the semiconductor chip to the carrier.
Public/Granted literature
- US20100055839A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2010-03-04
Information query
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