Invention Grant
- Patent Title: Method of forming a SiGe DIAC ESD protection structure
- Patent Title (中): 形成SiGe DIAC ESD保护结构的方法
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Application No.: US12395506Application Date: 2009-02-27
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Publication No.: US07754540B2Publication Date: 2010-07-13
- Inventor: Vladislav Vashchenko , Peter J. Hopper
- Applicant: Vladislav Vashchenko , Peter J. Hopper
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L21/332
- IPC: H01L21/332
Abstract:
A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors.
Public/Granted literature
- US20090162978A1 Method of Forming a SiGe DIAC ESD Protection Structure Public/Granted day:2009-06-25
Information query
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