Method of avoiding unwanted metal deposition on a semiconductor resistor structure

Invention Grant

US07754558B1 Method of avoiding unwanted metal deposition on a semiconductor resistor structure 有权

Title translation: 避免半导体电阻器结构上不想要的金属沉积的方法

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Patent Title: Method of avoiding unwanted metal deposition on a semiconductor resistor structure
Patent Title (中): 避免半导体电阻器结构上不想要的金属沉积的方法
Application No.: US11195937

Application Date: 2005-08-03
Publication No.: US07754558B1

Publication Date: 2010-07-13
Inventor: Reshmi Mitra , Scott Ruby , Sergai Drizlikh , Thomas Francis , Robert Tracy
Applicant: Reshmi Mitra , Scott Ruby , Sergai Drizlikh , Thomas Francis , Robert Tracy
Applicant Address: US CA Santa Clara
Assignee: National Semiconductor Corporation
Current Assignee: National Semiconductor Corporation
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L23/62

Method of avoiding unwanted metal deposition on a semiconductor resistor structure

Abstract:

An electrical resistance is produced in a semiconductor device by first providing a semiconductor resistor structure that includes a semiconductor resistor having formed thereon a native oxide layer. A portion of the native oxide layer that overlies a corresponding top surface portion of the semiconductor resistor is removed, in order to expose the top surface portion of the semiconductor resistor. Metal is deposited on the exposed top surface portion of the semiconductor resistor. A chemical reaction is effectuated in order to reduce the likelihood of metal reacting with the underlying silicon on any portion of the semiconductor resistor other than the top surface portion thereof. The chemical reaction can be an oxidation reaction that produces on the semiconductor resistor structure an oxide layer other than the native oxide layer and substantially thicker than the native oxide layer.

Abstract(Chinese):

通过首先提供包括在其上形成有自然氧化物层的半导体电阻器的半导体电阻器结构，在半导体器件中产生电阻。为了暴露半导体电阻器的顶表面部分，去除覆盖在半导体电阻器的对应的顶表面部分上的自然氧化物层的一部分。金属沉积在半导体电阻器的暴露的顶表面部分上。实现化学反应，以便降低与半导体电阻器的除其顶表面部分之外的任何部分上的下层硅金属反应的可能性。化学反应可以是氧化反应，其在半导体电阻器结构上产生除了天然氧化物层之外的氧化物层，并且基本上比天然氧化物层厚。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS