Invention Grant
- Patent Title: Semiconductor device comprising capacitor and method of fabricating the same
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Application No.: US12368606Application Date: 2009-02-10
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Publication No.: US07754562B2Publication Date: 2010-07-13
- Inventor: Yoshinori Tanaka , Masahiro Shimizu , Hideaki Arima
- Applicant: Yoshinori Tanaka , Masahiro Shimizu , Hideaki Arima
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP9-367189 19971224
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode assembly is formed in the memory cell region to upwardly extend to substantially the same height as the upper surface of the insulating film on the major surface of the semiconductor substrate. Additionally, the lower electrode assembly includes first and second lower electrodes that are adjacent through the insulating film. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. A semiconductor device organized as just described, permits implementation having a high density of integration while ensuring the capacitor exhibits high reliability and a constant capacitance.
Public/Granted literature
- US20090148989A1 SEMICONDUCTOR DEVICE COMPRISING CAPACITOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-06-11
Information query
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