Invention Grant
US07754567B2 Scalable power field effect transistor with improved heavy body structure and method of manufacture
有权
具有改进的重体结构和制造方法的可扩展功率场效应晶体管
- Patent Title: Scalable power field effect transistor with improved heavy body structure and method of manufacture
- Patent Title (中): 具有改进的重体结构和制造方法的可扩展功率场效应晶体管
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Application No.: US12485290Application Date: 2009-06-16
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Publication No.: US07754567B2Publication Date: 2010-07-13
- Inventor: Qi Wang , Ming-Huang Huang , Joelle Sharp
- Applicant: Qi Wang , Ming-Huang Huang , Joelle Sharp
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for forming a field effect transistor (FET) includes the following steps. A well region of a first conductivity type is formed in a semiconductor region of a second conductivity type. A gate electrode is formed adjacent to but insulated from the well region. A source region of the second conductivity type is formed in the well region. A heavy body recess is formed extending into and terminating within the well region adjacent the source region. The heavy body recess is at least partially filled with a heavy body material having a lower energy gap than the well region.
Public/Granted literature
- US20090253237A1 Scalable Power Field Effect Transistor with Improved Heavy Body Structure and Method of Manufacture Public/Granted day:2009-10-08
Information query
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