Invention Grant
- Patent Title: Inductor and method for manufacturing the same
- Patent Title (中): 电感器及其制造方法
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Application No.: US11893912Application Date: 2007-08-17
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Publication No.: US07754575B2Publication Date: 2010-07-13
- Inventor: Ji Houn Jung
- Applicant: Ji Houn Jung
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2006-0082425 20060829
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A method for manufacturing an inductor according to the embodiment comprises the steps of: forming a first photoresist pattern; forming an impurity region forming the inductor by implanting an impurity ion to the substrate by means of the first photoresist pattern and a pad region applying current across the impurity region; forming a second photoresist pattern so that a position spaced by a predetermined interval from the impurity region is opened; and forming a guard impurity region in the position spaced from the impurity region by implanting the same impurity ion as the impurity ion by means of the second photoresist pattern.
Public/Granted literature
- US20080054397A1 Inductor and method for manufacturing the same Public/Granted day:2008-03-06
Information query
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