Invention Grant
- Patent Title: Process for manufacturing a wafer by annealing of buried channels
- Patent Title (中): 掩埋通道退火制造晶圆的工艺
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Application No.: US11904745Application Date: 2007-09-28
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Publication No.: US07754578B2Publication Date: 2010-07-13
- Inventor: Flavio Villa , Gabriele Barlocchi , Pietro Corona
- Applicant: Flavio Villa , Gabriele Barlocchi , Pietro Corona
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics, S.r.l.
- Current Assignee: STMicroelectronics, S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Agent Lisa K. Jorgenson; Kevin D. Jablonski
- Priority: EP01830820 20011228
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
Public/Granted literature
- US20080036030A1 Process for manufacturing a wafer by annealing of buried channels Public/Granted day:2008-02-14
Information query
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