Invention Grant
- Patent Title: Method for manufacturing a three-dimensional semiconductor device and a wafer used therein
- Patent Title (中): 制造其中使用的三维半导体器件和晶片的方法
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Application No.: US11956560Application Date: 2007-12-14
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Publication No.: US07754581B2Publication Date: 2010-07-13
- Inventor: Hiroaki Ikeda , Masakazu Ishino , Hiroyuki Tenmei , Naoya Kanda , Yasuhiro Naka , Kunihiko Nishi
- Applicant: Hiroaki Ikeda , Masakazu Ishino , Hiroyuki Tenmei , Naoya Kanda , Yasuhiro Naka , Kunihiko Nishi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2006-337835 20061215
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method for manufacturing a semiconductor device includes the steps of forming first and second semiconductor wafers each including an array of chips and elongate electrodes, forming a groove on scribe lines separating the chips from one another; coating a surface of one of the semiconductor wafers with adhesive; bonding together the semiconductor wafers while allowing the groove to receive therein excessive adhesive; and heating the wafers to connect the elongate electrodes of both the semiconductor wafers.
Public/Granted literature
- US20080164575A1 METHOD FOR MANUFACTURING A THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND A WAFER USED THEREIN Public/Granted day:2008-07-10
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