Invention Grant
- Patent Title: Method of heat treatment of silicon wafer doped with boron
- Patent Title (中): 硼掺杂硅晶片的热处理方法
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Application No.: US10433314Application Date: 2001-12-21
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Publication No.: US07754585B2Publication Date: 2010-07-13
- Inventor: Yuji Sato , Shirou Yoshino , Hiroshi Furukawa , Hiroyuki Matsuyama
- Applicant: Yuji Sato , Shirou Yoshino , Hiroshi Furukawa , Hiroyuki Matsuyama
- Applicant Address: JP Nagasaki
- Assignee: Sumco Techxiv Corporation
- Current Assignee: Sumco Techxiv Corporation
- Current Assignee Address: JP Nagasaki
- Agency: Husch Blackwell Sanders LLP Welsh & Katz
- Priority: JP2000-389777 20001222
- International Application: PCT/JP01/11256 WO 20011221
- International Announcement: WO02/052632 WO 20020704
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a boron concentration in the thickness direction of the surface layer of the silicon wafer doped with boron.
Public/Granted literature
- US20040048456A1 Method of heat treatment of silicon wafer doped with boron Public/Granted day:2004-03-11
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