Shielded capacitor structure

Invention Grant

US07754606B2 Shielded capacitor structure 有权

Title translation: 屏蔽电容器结构

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Patent Title: Shielded capacitor structure
Patent Title (中): 屏蔽电容器结构
Application No.: US11931083

Application Date: 2007-10-31
Publication No.: US07754606B2

Publication Date: 2010-07-13
Inventor: Susanne A. Paul , Timothy J. Dupuis , Ali M. Niknejad
Applicant: Susanne A. Paul , Timothy J. Dupuis , Ali M. Niknejad
Applicant Address: US TX Austin
Assignee: Black Sand Technologies, Inc.
Current Assignee: Black Sand Technologies, Inc.
Current Assignee Address: US TX Austin
Agency: Johnson & Associates
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

Abstract(Chinese):

提供用于屏蔽形成在半导体器件中的电容器结构的方法和装置。在集成电路中形成的电容器中，一层或多层屏蔽层设置在导电条层周围以屏蔽电容器。屏蔽将电场限制在屏蔽的极限之间。

Public/Granted literature

US20080274612A1 SHIELDED CAPACITOR STRUCTURE Public/Granted day:2008-11-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的