Invention Grant
- Patent Title: Manufacturing method for the integration of nanostructures into microchips
- Patent Title (中): 将纳米结构纳入微芯片的制造方法
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Application No.: US11915537Application Date: 2005-05-26
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Publication No.: US07754608B2Publication Date: 2010-07-13
- Inventor: Christofer Hierold , Christoph Stampfer , Alain Jungen
- Applicant: Christofer Hierold , Christoph Stampfer , Alain Jungen
- Applicant Address: CH Zürich
- Assignee: ETH Zürich
- Current Assignee: ETH Zürich
- Current Assignee Address: CH Zürich
- Agency: Marshall, Gerstein & Borun LLP
- International Application: PCT/EP2005/005690 WO 20050526
- International Announcement: WO2006/125457 WO 20061130
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
State-of-the-art synthesis of carbon nanostructures (25) by chemical vapor deposition involve heating a catalyst material to high temperatures up 700-1000° C. in a furnace and flowing hydrocarbon gases through the reactor over a period of time. In order to enable a self assembly of nanostructures (25) on microchips (10) without damaging the microchip (10) by high temperatures the proposed manufacturing method comprises: A layer (1) contains indentations (3) on which nanostructures (25) are to be integrated and the indentations (3) are heated up by a current (I) conducted to the layer (1) via contact pads (2).
Public/Granted literature
- US20080308786A1 Manufacturing Method for the Integration of Nanostructures Into Microchips Public/Granted day:2008-12-18
Information query
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