Invention Grant
US07754610B2 Process for etching tungsten silicide overlying polysilicon particularly in a flash memory
失效
用于蚀刻覆盖多晶硅的硅化钨的工艺，特别是在闪速存储器中
- Patent Title: Process for etching tungsten silicide overlying polysilicon particularly in a flash memory
- Patent Title (中): 用于蚀刻覆盖多晶硅的硅化钨的工艺，特别是在闪速存储器中
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Application No.: US11445709Application Date: 2006-06-02
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Publication No.: US07754610B2Publication Date: 2010-07-13
- Inventor: Kyeong-Tae Lee , Jinhan Choi , Bi Jang , Shashank C. Deshmukh , Meihua Shen , Thorsten B. Lill , Jae Bum Yu
- Applicant: Kyeong-Tae Lee , Jinhan Choi , Bi Jang , Shashank C. Deshmukh , Meihua Shen , Thorsten B. Lill , Jae Bum Yu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Offices of Charles Guenzer
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C23F1/00
Abstract:
A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.
Public/Granted literature
- US20070281477A1 Process for etching tungsten silicide overlying polysilicon particularly in a flash memory Public/Granted day:2007-12-06
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