Invention Grant
US07754611B2 Chemical mechanical polishing process 有权
化学机械抛光工艺

Chemical mechanical polishing process
Abstract:
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
Public/Granted literature
Information query
Patent Agency Ranking
0/0