Invention Grant
- Patent Title: Patterning method utilizing SiBN and photolithography
- Patent Title (中): 利用SiBN和光刻的图案化方法
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Application No.: US12441741Application Date: 2008-06-06
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Publication No.: US07754622B2Publication Date: 2010-07-13
- Inventor: Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
- Applicant: Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2007-151065 20070607
- International Application: PCT/JP2008/060480 WO 20080606
- International Announcement: WO2008/149987 WO 20081211
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.
Public/Granted literature
- US20100112796A1 PATTERNING METHOD Public/Granted day:2010-05-06
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