Invention Grant
US07754908B2 Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)
失效
钨和钼化合物及其用于化学气相沉积（CVD）
- Patent Title: Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)
- Patent Title (中): 钨和钼化合物及其用于化学气相沉积（CVD）
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Application No.: US11649504Application Date: 2007-01-04
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Publication No.: US07754908B2Publication Date: 2010-07-13
- Inventor: Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
- Applicant: Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
- Applicant Address: DE Goslar
- Assignee: H. C. Starck Clevios GmbH
- Current Assignee: H. C. Starck Clevios GmbH
- Current Assignee Address: DE Goslar
- Agency: Connolly Bove Lodge & Hutz LLP
- Priority: DE102006000823 20060105
- Main IPC: C07F11/00
- IPC: C07F11/00
Abstract:
The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.
Public/Granted literature
- US20070160761A1 Tungsten and molybdenum compounds and thier use for chemical vapour deposition (CVD) Public/Granted day:2007-07-12
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