Invention Grant
- Patent Title: Silicon single electron device
- Patent Title (中): 硅单电子器件
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Application No.: US12157757Application Date: 2008-06-13
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Publication No.: US07755078B2Publication Date: 2010-07-13
- Inventor: Susan Angus , Andrew Steven Dzurak , Robert Graham Clark , Andrew Ferguson
- Applicant: Susan Angus , Andrew Steven Dzurak , Robert Graham Clark , Andrew Ferguson
- Applicant Address: AU
- Assignee: Qucor Pty. Ltd.
- Current Assignee: Qucor Pty. Ltd.
- Current Assignee Address: AU
- Agency: Wood, Phillips, Katz, Clark & Mortimer
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A silicon integrated circuit device comprising a near intrinsic silicon substrate in which there are one or more ohmic contact regions. An insulating layer lies above the substrate, and on top of the insulating layer is a lower layer of one or more aluminium gates. The surface of each of the lower gates is oxidised to insulate them from an upper aluminium gate that extends over the lower gates.
Public/Granted literature
- US20090309229A1 Silicon single electron device Public/Granted day:2009-12-17
Information query
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