Forming self-aligned nano-electrodes

Invention Grant

US07755082B2 Forming self-aligned nano-electrodes 失效

Title translation: 形成自对准纳米电极

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Patent Title: Forming self-aligned nano-electrodes
Patent Title (中): 形成自对准纳米电极
Application No.: US11983260

Application Date: 2007-11-08
Publication No.: US07755082B2

Publication Date: 2010-07-13
Inventor: Valery M. Dubin , Swaminathan Sivakumar , Andrew A. Berlin , Mark Bohr
Applicant: Valery M. Dubin , Swaminathan Sivakumar , Andrew A. Berlin , Mark Bohr
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Trop, Pruner & Hu, P.C.
Main IPC: H01L29/08
IPC: H01L29/08 ; H01L35/24 ; H01L51/00

Abstract:

A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very small.

Abstract(Chinese):

可以将纳米电极或纳米线中心蚀刻以形成纳米电极部分之间的间隙。这些部分可以最终构成单个电子晶体管。由电极部分形成的源极和漏极彼此自对准。使用间隔技术，可以使电极之间的间隙非常小。

Public/Granted literature

US20080116439A1 Forming self-aligned nano-electrodes Public/Granted day:2008-05-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08	...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的