A solid state image pickup device is provided which includes: a semiconductor substrate having a light reception region; a well being formed in the semiconductor substrate; charge accumulation regions disposed in the well in a matrix shape; a vertical transfer channel disposed in the well; a light shielding film formed above the semiconductor substrate; and a horizontal transfer channel connected to the vertical transfer channels, wherein the light reception region includes: a first region in which an opening is formed through the light shielding film above each of the charge accumulation regions; a second region in which an opening is not formed through the upper light shielding film; and a third region defined between the first and second regions along the column direction of the charge accumulation regions, the third region not having at least partially the well and not having an opening formed through the upper light shielding film.