Invention Grant
US07755107B2 Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels
有权
双极/双FET结构，包括具有隔离沟道的增强型和耗尽型FET
- Patent Title: Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels
- Patent Title (中): 双极/双FET结构，包括具有隔离沟道的增强型和耗尽型FET
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Application No.: US12284804Application Date: 2008-09-24
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Publication No.: US07755107B2Publication Date: 2010-07-13
- Inventor: Peter J. Zampardi , Mike Sun
- Applicant: Peter J. Zampardi , Mike Sun
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Main IPC: H01L31/0328
- IPC: H01L31/0328
Abstract:
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate. In the bipolar/dual FET structure, the channel of the enhancement-mode FET is situated above the base of the bipolar transistor and the channel of the depletion-mode FET is situated below the base of the bipolar transistor. The channel of the enhancement-mode FET is isolated from the channel of the depletion-mode FET so as to decouple the enhancement-mode FET from the depletion mode FET.
Public/Granted literature
- US20100072517A1 Bipolar/dual FET structure including enhacement and depletion mode fets with isolated channels Public/Granted day:2010-03-25
Information query
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